REG Metals supplies Gallium Arsenide Sputtering Targets (GaAs Sputtering Targets) for semiconductor manufacturing, RF electronics, optoelectronics, photonics, solar cells, and advanced thin-film deposition applications. Gallium Arsenide (GaAs) is a III-V compound semiconductor recognized for its high electron mobility, direct bandgap, excellent thermal stability, and superior high-frequency performance.
Gallium Arsenide Sputtering Targets are widely used in RF magnetron sputtering, DC sputtering, reactive sputtering, and physical vapor deposition (PVD) processes to deposit high-quality GaAs thin films onto semiconductor wafers, glass, sapphire, ceramics, and other substrates.
GaAs thin films are essential for high-speed integrated circuits, microwave devices, laser diodes, LEDs, infrared detectors, photovoltaic cells, wireless communication systems, and optoelectronic devices where superior electronic performance is required compared to conventional silicon materials.
REG Metals supplies high-purity Gallium Arsenide Sputtering Targets with controlled stoichiometry, density, grain structure, and dimensional accuracy. Custom target sizes, bonding options, and purity levels are available for research, pilot production, and industrial manufacturing. Every shipment can be supplied with a Certificate of Analysis (COA) and complete material traceability.
