REG Metals supplies Gallium Oxide Sputtering Targets (Ga₂O₃ Targets) for semiconductor manufacturing, power electronics, ultraviolet optoelectronics, transparent conductive coatings, sensors, and advanced thin-film deposition applications. Gallium Oxide (Ga₂O₃) is an emerging ultra-wide bandgap semiconductor material known for its high breakdown electric field, excellent thermal stability, wide bandgap, and superior electrical properties.
Gallium Oxide Sputtering Targets are widely used in RF sputtering, magnetron sputtering, reactive sputtering, and thin-film deposition processes to produce high-quality gallium oxide coatings on substrates including silicon, sapphire, glass, ceramics, and semiconductor wafers.
Ga₂O₃ thin films are increasingly important for next-generation power semiconductor devices, including high-voltage transistors, Schottky diodes, UV detectors, and electronic components designed for high-temperature and high-power environments.
REG Metals supplies high-purity Gallium Oxide sputtering targets with controlled composition, density, purity, and dimensional accuracy for semiconductor research, industrial production, and advanced material development. Custom target sizes, bonding options, and specifications are available with Certificate of Analysis (COA) and full material traceability.
