REG Metals supplies Gallium Phosphide Wafers (GaP Wafers) for semiconductor manufacturing, optoelectronics, photonics, LED production, power electronics, sensors, and advanced materials research. Gallium Phosphide (GaP) is a III-V compound semiconductor known for its wide bandgap, high electron mobility, excellent thermal stability, high refractive index, and superior optical properties.
Gallium Phosphide Wafers are widely used as substrates and active semiconductor materials for light-emitting diodes (LEDs), laser diodes, photodetectors, photonic devices, solar cell research, MEMS, and integrated optoelectronic systems. Due to its indirect bandgap and excellent optical transmission, GaP is also utilized in infrared optics and advanced photonic applications.
REG Metals supplies high-quality Gallium Phosphide Wafers with controlled crystal orientation, thickness, surface finish, and low defect density. Custom wafer diameters, orientations, doping types, and polishing options are available with Certificate of Analysis (COA) and complete material traceability.
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