Ruthenium Oxide Sputtering Target

• High-purity Ruthenium Oxide Sputtering Target
• RuO₂ Sputtering Target
• Ruthenium Dioxide Sputtering Target
• Ruthenium(IV) Oxide Target
• High-purity ceramic sputtering material
• Excellent chemical stability
• Excellent thermal stability
• High electrical conductivity for a conductive oxide
• Suitable for RF sputtering
• Suitable for DC sputtering where system conditions permit
• Suitable for PVD thin-film deposition
• Suitable for semiconductor research
• Suitable for electronic materials
• Suitable for conductive oxide films
• Suitable for electrode development
• Suitable for resistor and thin-film resistor research
• Suitable for sensor applications
• Suitable for capacitor and dielectric research
• Suitable for oxide electronics
• Suitable for MEMS research
• High-density target options available
• High-purity grades available
• Bonded and unbonded configurations
• Copper or molybdenum backing plates available
• Custom target dimensions
• COA available

Property	Specification
Product Name	Ruthenium Oxide Sputtering Target
Chemical Name	Ruthenium(IV) Oxide / Ruthenium Dioxide
Chemical Formula	RuO₂
CAS Number	12036-10-1
Molecular Weight	~133.07 g/mol
Ruthenium Content	~75.8 wt.%
Oxygen Content	~24.2 wt.%
Purity	99.9%, 99.95%, 99.99%, Custom
Appearance	Dark Gray / Black Ceramic
Crystal Structure	Rutile-Type Tetragonal
Density	~6.9–7.1 g/cm³
Electrical Character	Conductive Oxide
Sputtering Method	RF / DC / Reactive Sputtering / Custom
Target Shape	Circular / Rectangular / Custom
Diameter	Custom
Length	Custom
Width	Custom
Thickness	Custom
Density	Custom / High-Density Available
Bonding	Unbonded / Bonded
Backing Plate	Cu / Mo / Custom
Surface Finish	Sputter-Ready / Custom
Packaging	Protective / Vacuum / Custom

• 99.9% Ruthenium Oxide Sputtering Target
• 99.95% Ruthenium Oxide Sputtering Target
• 99.99% High-Purity RuO₂ Sputtering Target
• Ultra-High-Purity Ruthenium Oxide Target
• Ruthenium Dioxide Sputtering Target
• Ruthenium(IV) Oxide Sputtering Target
• RuO₂ PVD Target
• RF Sputtering Grade RuO₂
• DC Sputtering Grade RuO₂
• Conductive Oxide Sputtering Target
• Semiconductor-Grade RuO₂ Target
• Electronics-Grade Ruthenium Oxide Target
• Thin-Film Grade RuO₂
• Electrode-Grade Ruthenium Oxide Target
• Sensor-Grade RuO₂ Target
• Research-Grade Ruthenium Oxide
• High-Density RuO₂ Target
• Bonded RuO₂ Sputtering Target
• Unbonded RuO₂ Sputtering Target
• Custom Ruthenium Oxide Target

1. What is a Ruthenium Oxide Sputtering Target?

A Ruthenium Oxide Sputtering Target is a dense RuO₂ ceramic material used as a source for depositing ruthenium oxide thin films through physical vapor deposition.

2. What is RuO₂ Sputtering Target used for?

RuO₂ targets are used for semiconductor research, conductive oxide thin films, electrodes, thin-film resistors, sensors, oxide electronics, MEMS, and advanced electronic-material development.

3. Can RuO₂ targets be used for RF sputtering?

Yes. RF sputtering is commonly suitable for ceramic and oxide target materials. Deposition conditions should be optimized for the specific target and substrate.

4. Can RuO₂ be used for DC sputtering?

Because RuO₂ is a relatively conductive oxide, DC sputtering may be possible depending on target density, conductivity, equipment configuration, and process parameters.

5. What purity levels are available?

Common grades include 99.9%, 99.95%, and 99.99% RuO₂, with tighter trace-element specifications available for semiconductor and research applications.

6. What target shapes are available?

Common configurations include circular and rectangular ruthenium oxide sputtering targets, with custom geometries available for specialized deposition equipment.