Silicon Carbide (SiC) Crystal Substrates

• High-quality Silicon Carbide (SiC) Crystal Substrates
• SiC Semiconductor Substrates
• Silicon Carbide Wafers
• SiC Wafers
• SiC Crystal Wafers
• Silicon Carbide Single Crystal Substrates
• Silicon Carbide Crystal Substrates
• Wide-bandgap semiconductor material
• Excellent thermal conductivity
• High-temperature capability
• High breakdown electric field
• High electron saturation velocity
• Low switching losses
• Excellent chemical resistance
• Excellent radiation resistance
• High mechanical hardness
• Excellent dimensional stability
• Controlled crystal orientation
• 4H-SiC and 6H-SiC available
• Conductive and semi-insulating grades available
• N-type and semi-insulating substrates
• Epitaxial-ready surfaces
• Double-side polished options
• Single-side polished options
• CMP-polished options
• Low surface roughness
• Low defect density options
• Suitable for power semiconductor research
• Suitable for RF and microwave devices
• Suitable for LEDs and optoelectronics
• Suitable for sensors
• Suitable for high-temperature electronics
• Suitable for semiconductor R&D
• Custom wafer specifications available
• COA available

Property	Specification
Product Name	Silicon Carbide Crystal Substrate
Common Names	SiC Wafer, SiC Substrate, Silicon Carbide Wafer
Chemical Formula	SiC
CAS Number	409-21-2
Material Type	Single-Crystal Semiconductor
Polytype	4H-SiC / 6H-SiC / Other
Crystal Structure	Hexagonal / Polytype Dependent
Crystal Orientation	(0001), (000-1), (11-20), (1-100), Custom
Wafer Diameter	2", 3", 4", 6", Custom
Thickness	Custom
Conductivity Type	N-Type / Semi-Insulating / Custom
Dopant	Nitrogen / Vanadium / Custom
Resistivity	Custom
Surface Finish	Polished / CMP
Surface Roughness	Custom
TTV	Custom
Bow / Warp	Custom
Micropipe Density	Controlled
Dislocation Density	Controlled
Epitaxial Readiness	Available
Packaging	Cleanroom / Wafer Box / Custom

• Silicon Carbide Crystal Substrates
• SiC Crystal Substrates
• Silicon Carbide Wafers
• SiC Wafers
• SiC Semiconductor Wafers
• Silicon Carbide Single Crystal Wafers
• SiC Single Crystal Substrates
• 4H-SiC Substrates
• 4H-SiC Wafers
• 6H-SiC Substrates
• 6H-SiC Wafers
• N-Type SiC Substrates
• Semi-Insulating SiC Substrates
• Conductive SiC Substrates
• High-Purity SiC Substrates
• Epitaxial-Ready SiC Wafers
• Epi-Ready 4H-SiC Substrates
• Si-Face SiC Substrates
• C-Face SiC Substrates
• Double-Side Polished SiC Wafers
• Single-Side Polished SiC Wafers
• CMP-Polished SiC Substrates
• Research-Grade SiC Wafers
• Semiconductor-Grade SiC Substrates
• Power-Electronics-Grade SiC Wafers
• RF-Grade SiC Substrates
• Custom Silicon Carbide Crystal Substrates

1. What are Silicon Carbide Crystal Substrates?

Silicon Carbide Crystal Substrates are single-crystal SiC wafers used as semiconductor platforms for fabricating electronic, optoelectronic, RF, and high-temperature devices.

2. What SiC polytypes are available?

The most commonly requested semiconductor substrates are 4H-SiC and 6H-SiC. The appropriate polytype depends on the intended device and research application.

3. What wafer sizes are available?

REG Metals can source 2-inch, 3-inch, 4-inch, 6-inch, and custom-size SiC substrates, subject to the selected polytype and specification.

4. What crystal orientations are available?

Common orientations include (0001), (000-1), (11-20), and (1-100). Custom orientations can be specified for specialized semiconductor research.

5. Can SiC substrates be supplied with polished or epi-ready surfaces?

Yes. Options include single-side polished, double-side polished, CMP-polished, and epitaxial-ready SiC substrates, with controlled surface roughness, TTV, bow, warp, and defect density.

6. Does REG Metals provide a Certificate of Analysis?

Yes. A Certificate of Analysis (COA) can be supplied documenting polytype, crystal orientation, wafer diameter, thickness, conductivity type, resistivity, surface roughness, TTV, bow, warp, micropipe density, and other applicable specifications.