Silicon Carbide Sputtering Targets (SiC Targets) are high-performance ceramic targets designed for Physical Vapor Deposition (PVD), RF sputtering, magnetron sputtering, and thin-film coating applications. Silicon carbide combines the exceptional properties of silicon and carbon, offering high hardness, excellent thermal conductivity, superior chemical resistance, wide bandgap performance, and outstanding high-temperature stability.
SiC sputtering targets are widely used to deposit silicon carbide thin films for applications requiring durability, electrical performance, wear resistance, and extreme environmental stability. These coatings are essential in semiconductor manufacturing, power electronics, MEMS devices, optical coatings, aerospace components, protective coatings, sensors, and advanced research applications.
REG Metals supplies high-purity Silicon Carbide Sputtering Targets with controlled composition, high density, low porosity, excellent grain structure, and consistent sputtering performance for industrial and research thin-film deposition systems.
Silicon Carbide Sputtering Target
- High purity silicon carbide
- Excellent sputtering stability
- High thermal conductivity
- Wide bandgap semiconductor properties
- Outstanding chemical resistance
- High hardness and wear resistance
- Excellent oxidation resistance
- High-temperature capability
- Low contamination deposition
- Uniform thin-film coatings
- Long target lifetime
- Custom dimensions available
