Silicon Nitride (Si₃N₄) Sputtering Targets

• High-purity Silicon Nitride (Si₃N₄) Sputtering Target
• Si₃N₄ Sputtering Target
• Silicon Nitride PVD Target
• SiN Sputtering Target
• Silicon Nitride Ceramic Target
• High-purity ceramic sputtering material
• Controlled Si:N stoichiometry
• Controlled nitrogen content
• High density
• Low porosity
• Low particle generation
• Stable sputtering performance
• Excellent dielectric properties
• High electrical insulation
• Excellent chemical resistance
• Excellent thermal stability
• High-temperature stability
• Suitable for RF sputtering
• Suitable for magnetron sputtering
• Suitable for reactive sputtering
• Suitable for PVD
• Suitable for semiconductor thin films
• Suitable for dielectric coatings
• Suitable for microelectronics
• Suitable for MEMS
• Suitable for photovoltaic applications
• Suitable for optical coatings
• Suitable for passivation layers
• Suitable for diffusion barriers
• Suitable for sensor applications
• Suitable for advanced materials research
• Bonded and unbonded targets
• Copper and molybdenum backing plates
• Custom target dimensions
• COA available

Property	Specification
Product Name	Silicon Nitride Sputtering Target
Chemical Name	Silicon Nitride
Chemical Formula	Si₃N₄
Common Designation	SiN / Si₃N₄
CAS Number	12033-89-5
Target Type	Ceramic
Purity	99.5%, 99.9%, 99.95%, 99.99%, Custom
Appearance	Gray / Dark Gray
Si:N Ratio	Controlled
Nitrogen Content	Controlled
Density	High-Density / Custom
Porosity	Low / Custom
Crystal Phase	α-Si₃N₄ / β-Si₃N₄ / Amorphous / Custom
Sputtering Method	RF / Magnetron / Reactive
Target Shape	Round / Rectangular / Custom
Diameter	Custom
Length	Custom
Width	Custom
Thickness	Custom
Bonding	Bonded / Unbonded
Backing Plate	Cu / Mo / Custom
Surface Finish	Sputter-Ready / Custom
Grain Size	Fine Grain / Custom
Packaging	Protective / Vacuum / Custom

• 99.5% Silicon Nitride Sputtering Target
• 99.9% Silicon Nitride Sputtering Target
• 99.95% High-Purity Si₃N₄ Target
• 99.99% Ultra-High-Purity Silicon Nitride Target
• High-Density Si₃N₄ Sputtering Target
• Low-Porosity Silicon Nitride Target
• RF Sputtering Grade Si₃N₄
• Magnetron Sputtering Grade
• Reactive Sputtering Grade
• Semiconductor-Grade Silicon Nitride
• Electronics-Grade Si₃N₄
• MEMS-Grade Silicon Nitride
• Optical-Grade Si₃N₄
• Photovoltaic-Grade Silicon Nitride
• Dielectric-Grade Silicon Nitride
• Thin-Film Grade Si₃N₄
• α-Si₃N₄ Target
• β-Si₃N₄ Target
• Amorphous Silicon Nitride Target
• Bonded Silicon Nitride Target
• Unbonded Silicon Nitride Target
• Copper-Backed Si₃N₄ Target
• Molybdenum-Backed Si₃N₄ Target
• Custom Silicon Nitride Sputtering Target

1. What is a Silicon Nitride Sputtering Target?

A Silicon Nitride Sputtering Target is a high-purity ceramic target used as the source material for depositing Si₃N₄ or silicon-nitride-based thin films onto substrates using physical vapor deposition.

2. What are Si₃N₄ sputtering targets used for?

Applications include semiconductor manufacturing, dielectric layers, MEMS, microelectronics, photovoltaics, optical coatings, passivation films, diffusion barriers, sensors, and advanced thin-film research.

3. Can Si₃N₄ targets be used for RF sputtering?

Yes. Because silicon nitride is electrically insulating, RF sputtering is commonly used for ceramic Si₃N₄ targets.

4. Can silicon nitride be deposited by reactive sputtering?

Yes. Silicon or silicon-containing targets can also be used with nitrogen-containing reactive atmospheres to produce silicon nitride films. The appropriate target configuration depends on the desired film composition and deposition system.

5. What purity levels are available?

REG Metals can source 99.5%, 99.9%, 99.95%, and 99.99% Si₃N₄ targets, with customized trace-impurity specifications available.

6. What target shapes are available?

Common configurations include round, rectangular, planar, and custom-shaped silicon nitride sputtering targets.